The R1RW0408DI is a 4-Mbit High-Speed static RAM organized 512-kword × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting.




Type Title Date
Datasheet PDF 355 KB 日本語
Guide PDF 471 KB 日本語
Guide PDF 1.27 MB 日本語
Product Reliability Report PDF 202 KB
Product Change Notice PDF 1.04 MB 日本語
Product Change Notice PDF 885 KB 日本語
Package Outline Drawing PDF 21 KB
7 items

Design & Development