Overview

Description

The R1RW0408DI is a 4-Mbit High-Speed static RAM organized 512-kword × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI is packaged in 400-mil 36-pin SOJ for high density surface mounting.

Documentation

Type
Date
PDF 355 KB 日本語 Datasheet
PDF 471 KB 日本語 Guide
PDF 1.27 MB 日本語 Guide
PDF 202 KB Product Reliability Report
PDF 1.04 MB 日本語 Product Change Notice
PDF 885 KB 日本語 Product Change Notice
PDF 21 KB Package Outline Drawing
7 items

Design & Development

Models

Models

Type Date
ZIP 11 KB Model - IBIS
1 item