The R1RP0408DI Series is a 4-Mbit High-Speed static RAM organized 512-k word × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ.


  • Single 5.0 V supply: 5.0 V ± 10 %
  • Access time: 12 ns (max)
  • Completely static memory: No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible: All inputs and outputs
  • Operating current: 130 mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current: 5 mA (max)
  • Center VCC and VSS type pin out
  • Temperature range: −40 to +85°C




Type Title Date
Datasheet PDF 343 KB 日本語
Guide PDF 182 KB 日本語
Guide PDF 471 KB 日本語
Guide PDF 1.27 MB 日本語
Product Reliability Report PDF 202 KB
Product Change Notice PDF 1.04 MB 日本語
Product Change Notice PDF 885 KB 日本語
Package Outline Drawing PDF 21 KB
8 items

Design & Development