Renesas Electronics Delivers IGBT with Industry-Leading Low Power Loss for Improved Power Efficiency in Air Conditioners

RJP65T54DPM-E0 is Ideal for PFC Stage in Mid- to Low-End Air Conditioners

16 Nov 2015

TOKYO, Japan, November 16, 2015 — Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the new RJP65T54DPM-E0, a power semiconductor device for use in air conditioner power factor correction (PFC) circuits that employ partial switching (Note 1), which are widely used in mid- to low-end air conditioners.

Today's air conditioners must meet high efficiency and switching noise reduction standards. The RJP65T54DPM-E0 is an expansion of Renesas' 7th generation insulated gate bipolar transistor (IGBT) that realizes power efficiency with industry-leading low saturation voltage (Vce (sat)) of 1.35 V and low switching noise.

Key features of the RJP65T54DPM-E0:

(1) Industry-leading low power loss, ideal for air conditioner PFC circuits

The RJP65T54DPM-E0 is based on Renesas' 7th generation IGBT technology and utilizes the company's thin-wafer technology. The RJP65T54DPM-E0 is optimized for the requirements of air conditioner PFC circuits, with the industry-leading low Vce (sat) of 1.35 V, which translates to the lowest level of conduction losses for the PFC circuit.

 

(2) Low switching noise emission

The RJP65T54DPM-E0 has minimal switching noise, which reduces electromagnetic interference (EMI) and can simplify EMI filtering.

 

(3) Isolated-type TO-3PF package

The use of an isolated-type full molded package eliminates the need for an insulation sheet between the device and the heat sink. In addition, the RJP65T54DPM-E0 is rated up to Tj=175°C which improves the operating temperature range.

In addition to the new IGBT device, Renesas has three existing IGBT devices in production utilizing 7th generation technology which are suitable for full switching PFC circuits. (The RJP65T43DPM-00, the RJH65T46DPQ-A0, and the RJH65T47DPQ-A0).

 

Pricing and Availability

Samples of the RJP65T54DPM-E0 are now available, priced at US$3.00 per unit. Mass production is scheduled to begin in March 2016 and is expected to reach a volume of 300,000 units per month by March 2017. (Pricing and availability are subject to change without notice.)

 

Refer to the separate sheet (PDF: 55 KB) for the main specifications of the RJP65T54DPM-E0.

(Note1) In PFC circuits employing partial switching, the IGBT is turned on for a fixed period to force current flow to the input inductance and improve the power factor.

About Renesas Electronics Corporation

Renesas Electronics Corporation (TSE: 6723) delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live—securely and safely. A global leader in microcontrollers, analog, power, SoC products and integrated platforms, Renesas provides the expertise, quality, and comprehensive solutions for a broad range of Automotive, Industrial, Home Electronics, Office Automation and Information Communication Technology applications to help shape a limitless future. Learn more at renesas.com.

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The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.