Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
  • Isolated package
  • Trench gate and thin wafer technology (G7H series)
  • High-Speed switching
  • Operation frequency (50Hz ≤ f ˂ 20kHz)
  • Not guarantee short circuit withstand time

Product Options

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Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
RJP65T54DPM-A0 Data Sheet (650V - 30A - IGBT Application: Partial switching circuit) Datasheet PDF 520 KB
Application Notes & White Papers
Attention of Handling Semiconductor Devices 日本語 Application Note PDF 402 KB
TO-247plus外形について Application Note PDF 655 KB
TO-247plus Package Application Note PDF 506 KB
Usage Notes for Paralleled IGBT 日本語 Application Note PDF 941 KB
IGBT Application Note 日本語 Application Note PDF 1.05 MB
Other
Discrete & Power Devices Brochure Brochure PDF 3.72 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB