200V, 7.5A Enhancement Mode GaN Power Transistor
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概要
Description
The ISL70024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.
特長
- Very low rDS(ON) 45mΩ (typical)
- Ultra low total gate charge 2.5nC (typical)
- SEE hardness (see SEE report for details)
- SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV•cm2/mg
- Radiation acceptance (see TID report)
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s) : 75krad(Si)
- Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military-temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
アプリケーション
アプリケーション
- Switching regulation
- Motor drives
- Relay drives
- Inrush protection
- Down hole drilling
- High reliability industrial
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Evaluation Board for the ISL70040SEH and ISL70024SEH (200V GaN FET)
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH...
主要ドキュメント:
耐放射線ローサイドGaN FETドライバおよびGaN FET
ISL73040SEHEV4Z評価ボードは、ISL73040SEHローサイドGaNドライバとISL73024SEH 200V GaN FETを使用してハーフブリッジパワーステージを構築する方法を示します。ISL73040SEHは、4.5Vゲートドライブ電圧(VDRV)で動作します。これはゲート電圧が...
主要ドキュメント:
モデル
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Processing table
| CLCC | Tray | 1 | サンプルを入手, | ||
| CLCC | Tray | 25 | |||
| 100 | |||||
| PFL | 5 |
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