Overview
Description
The NP100N055MUH, NP100N055NUH, NP100N055PUH are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
- Super low on-state resistance NP100N055MUH, NP100N055NUH RDS(on) = 4.9 mΩ MAX. (VGS = 10 V, ID = 50 A) NP100N055PUH RDS(on) = 4.5 mΩ MAX. (VGS = 10 V, ID = 50 A)
- High avalanche energy, High avalanche current
- Low input capacitance Ciss = 7000 pF TYP. (VDS = 25 V)
Comparison
Applications
Documentation
= Featured Documentation
Log in required to subscribe
|
|
|
---|---|---|
Type | Title | Date |
Datasheet | PDF 430 KB | |
Guide | PDF 2.65 MB | |
Application Note | PDF 648 KB 日本語 | |
Brochure | PDF 2.24 MB | |
4 items
|
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.