In recent years, the space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride (GaN) FETs as power stages. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Renesas has developed a radiation low-side GaN FET driver to efficiently drive the GaN FETs used in these power systems. These plastic-packaged, radiation tolerant GaN FET drivers are used for DC/DC power supplies in small satellites (smallsats) and launch vehicles.

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タイトル language 分類 形式 サイズ 日付
アプリケーションノート、ホワイトペーパー
急拡大する小型衛星市場「New Space」におけるGaNデバイスの活用 English ホワイトペーパー PDF 1.49 MB
Powering Small Satellite Constellations with Plastic ICs ホワイトペーパー PDF 405 KB
AN9867: End of Life Derating: A Necessity or Overkill アプリケーションノート PDF 338 KB
その他資料
Intersil Space Products Brochure カタログ PDF 3.14 MB

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