IGBT 650V 40A TO-247A Built-In FRD
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ECADモデルを調べる
概要
特長
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology (G7H series)
- High-Speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 Ω, Ta = 25°C, Inductive load)
- Operation frequency (20kHz ≤ f ˂ 100kHz)
- Not guarantee short circuit withstand time
設計・開発
モデル
ECADモデル
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Processing table
| TO-247A | Tube | サンプルを入手, |
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