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ECADモデルを調べる
概要
特長
- Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High-Speed switching tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 30 A, Rg = 10 Ω, Ta=25°C , inductive load)
- Operation frequency (20kHz ≤ f ˂ 40kHz)
設計・開発
モデル
ECADモデル
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Processing table
| TO-3PFP |
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