60 V – 16 A – N-channel Power MOS FET
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概要
説明
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
特長
- Low on-state resistance RDS(on) = 35 mΩ MAX. (VGS = 10 V, ID = 8 A)
- Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Gate to Source ESD protection diode built in
- Designed for automotive application and AEC-Q101 qualified
ドキュメント
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日付 | |
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| PDF 335 KB | データシート | |
| PDF 2.65 MB 英語 | アプリケーションノート | |
| PDF 1.71 MB | ガイド | |
| PDF 218 KB | 製品別信頼性資料 | |
| PDF 2.24 MB | カタログ | |
| PDF 596 KB | ガイド | |
6 items
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設計・開発
モデル
ECADモデル
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Processing table
| HSON | Power SON-8 5x6 | Embossed Tape | サンプルを入手, |
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