The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4. 5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14. 7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on and turn-off paths. The ISL71040M operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld Thin Dual Flat No-Lead (TDFN) plastic package.


  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level) Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
    • Independent outputs for adjustable turn-on/turn-off speeds
  • NiPdAu-Ag Lead finish (Sn-free, Pb-free)
  • Moisture Sensitivity Level (MSL) Rating: 1
  • Passes NASA Low Outgassing Specifications
  • Full military temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C
  • Characterized radiation levels
    • Low Dose Rate (LDR) <0.01rad(Si)/s : 30krad(Si)
    • No SEB/L, VDD = 16.5V : 43MeV•cm2/mg


製品名 Part Status Pkg. Type Carrier Type MOQ 購入/サンプル
Active TDFN Tube 1
Active TDFN Reel 6000
Active TDFN Reel 250


タイトル language 分類 形式 サイズ 日付
star ISL71040M Datasheet Rev.1.00 データシート PDF 681 KB
急拡大する小型衛星市場「New Space」におけるGaNデバイスの活用 English ホワイトペーパー PDF 1.49 MB
AN9867: End of Life Derating: A Necessity or Overkill アプリケーションノート PDF 338 KB
Intersil Space Products Brochure カタログ PDF 3.12 MB
ISL70040SEH Neutron Test Report レポート PDF 316 KB


タイトル language 分類 形式 サイズ 日付
ISL70040SEH Steady State iSim Model Model - Other SXSCH 104 KB
ISL70040SEH, ISL73040SEH PSPICE Model Model - SPICE ZIP 13 KB


製品名 タイトル 分類 会社名
ISL71040MEV1Z 耐放射線性ローサイドGaN FETドライバ評価ボード Evaluation Renesas
ISL71043MEVAL1Z 耐放射線シングルエンド電流モードPWMコントローラ評価ボード Evaluation Renesas