Non-Volatile 16Mb High Performance MRAM, 1.8V
概览
描述
The M1016204 series is a 16Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1016204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1016204 supports Quad SPI, SDR and DDR interface. It operates at 1.8V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.
M10xx204_M30xx204 - Block Diagram
M10xx204_M30xx204 - Pinout (SOIC)
M10xx204_M30xx204 - Pinout (DFN)
特性
- Utilizing advanced pMTJ STT-MRAM technology
- High-speed Quad SPI interface, up to 108MHz SDR mode
- Low active write and read current
- Independent 256-byte user programmable and lockable NVM
- Industrial plus operating temperature: -40°C to +105°C
- Supply voltage: 1.8V
- Package: 8-pin SOIC and 8-pad DFN (WSON)
设计和开发
开发板与套件
开发板与套件
MRAM Evaluation Kit
模型
ECAD 模块
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
产品选择
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play_circle_filled视频和培训
Renesas’ high performance serial and parallel MRAM memory family provides the largest range of SPI and parallel interface non-volatile memory sizes, with fast read and write speeds. The MRAM family is ideal for applications ranging from factory automation equipment requiring fast back-up data retrieval to medical data units with long-term data storage requirements.
