This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • High density mounting
  • Power supply voltage applies 12 V.
  • AEC-Q101 Compliant

产品选择

器件号 Part Status Pkg. Type Carrier Type Buy Sample
Active SOP Embossed Tape
Availability

文档和下载

文档标题 language 类型 文档格式 文件大小 日期
数据手册与勘误表
RJF0409JSP Data Sheet (40V, 5A Silicon N Channel Thermal FET Power Switching) 日本語 数据手册 PDF 271 KB
应用指南 &白皮书
Attention of Handling Semiconductor Devices 日本語 应用文档 PDF 648 KB
功率MOS FET 应用说明 应用文档 PDF 2.71 MB
Power MOS FET APPLICATION NOTE 日本語 应用文档 PDF 814 KB
PCN / PDN
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 产品变更通告 PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001B/E ) 日本語 产品变更通告 PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001A/E ) 日本語 产品变更通告 PDF 1.46 MB
其他
Product Scout Automotive 手册 PDF 3.25 MB
PowerMOSFET & IPD 手册 PDF 2.24 MB
瑞萨 分立器件 综合产品目录 晶体管/二极管/双向晶闸管/晶闸管 手册 PDF 11.56 MB
Renesas Semiconductor Lead-Free Packages 手册 PDF 1.32 MB