These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

特性

  • Low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)
  • Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified

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description文档

文档标题 language 类型 文档格式 文件大小 日期
数据手册与勘误表
star NP40N10YDF, NP40N10VDF, NP40N10PDF Datasheet 数据手册 PDF 156 KB
使用指南与说明
Power Devices Part Number Guide 指南 PDF 2.00 MB
其他
PowerMOSFET & IPD 手册 PDF 2.24 MB