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概览

描述

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

特性

  • N-channel 2.5V, P-channel 1.8V drive available
  • Low on-state resistance
    N-channel
    RDS(on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
    RDS(on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
    P-channel
    RDS(on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
    RDS(on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
    RDS(on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
  • Built-in gate protection diode
  • Lead-free and Halogen-free

应用

文档

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数据手册
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其他

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