This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Power supply voltage applies 12 V and 24 V.
  • AEC-Q101 Compliant

产品选择

器件号 Part Status Pkg. Type Carrier Type Buy Sample
RJF0605JPD-00#J3
Not Recommended for New Designs DPAK(S) Embossed Tape
Availability

文档和下载

文档标题 其他语言 类型 文档格式 文件大小 日期
数据手册与勘误表
RJF0605JPD Datasheet 日本語 数据手册 PDF 89 KB
应用指南 &白皮书
功率MOS FET 应用说明 应用文档 PDF 2.71 MB
Power MOS FET APPLICATION NOTE 日本語 应用文档 PDF 814 KB
PCN / PDN
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 产品变更通告 PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001B/E ) 日本語 产品变更通告 PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001A/E ) 日本語 产品变更通告 PDF 1.46 MB
其他
Product Scout Automotive 手册 PDF 3.25 MB
PowerMOSFET & IPD 手册 PDF 2.24 MB
瑞萨 分立器件 综合产品目录 晶体管/二极管/双向晶闸管/晶闸管 手册 PDF 11.56 MB
Renesas Semiconductor Lead-Free Packages 手册 PDF 1.32 MB