The RJP1CS23DWS 1250V, 30A, trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in a Sawn wafer package type.
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Pkg. Type |
Carrier Type |
购买 / 样片 |
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器件号 | |||
Sawn |