概览

Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) use an exclusive trench gate configuration in the process structure. These devices provide faster switching performance compared to previous IGBT generations. They also reduce conduction losses by decreasing the saturation voltage.

Our 1800V - 300A/150A IGBTs are optimized for high-power applications such as wind power generation and solar inverters.

  • Renesas 8th-generation trench IGBT
  • Short circuit withstands time (10µs min.)
  • Optimized for high-power application
  • Unsawn wafer 
  • Wafer size = 200mm
  • Quality grade: Standard

应用

  • Wind power generation
  • Solar inverters

文档

= 相关文档
类型 文档标题 日期
数据手册
RBN150N180S2HFWA Datasheet
PDF 144 KB
手册
Power Products Brochure
PDF 8.73 MB
应用文档
IGBT Usage Notes on Gate Drive
PDF 1.11 MB 日文
应用文档
Attention of Handling Semiconductor Devices
PDF 648 KB 日文
4 items

设计和开发

ECAD 模块

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

扩展 ECAD 模块
Diagram of ECAD Models

产品选择

    Processing table
    Pkg. Type
    购买 / 样片
    器件号
    RBN150N180S2HFWA-850#FF0
    circle有效
    memory
    view_in_ar
    		Wafer
    RBN150N180S2HFWA-8F0#FF0
    circle有效
    memory
    view_in_ar
    		Wafer
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