概览

简介

Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in its process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching losses. This 1200 V/150 A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.

特性

  • 1200V Trench & field stop AE4 technology
  • Low collector to emitter saturation voltage (1.6V typ.)
  • Low Switching loss
  • Easy paralleling by internal Rg
  • AEC Q101 (HTRB, HTGB) qualified

产品对比

应用

应用

  • Hybrid and electric vehicle inverter

文档

类型 文档标题 日期
数据手册 登录后下载 PDF 139 KB
应用文档 PDF 1.11 MB 日文
应用文档 PDF 648 KB 日文
应用文档 PDF 941 KB 日文
应用文档 PDF 1.05 MB 日文
5 items

设计和开发

模型