Features
- 480mOhm, 700V GaN Device
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- 800V transient over-voltage capability
- Operation with E-mode gate drivers without the need for Zener protection
- Low QRR
- Reduced crossover loss
- Achieves increased efficiency in both hard- and soft-switched circuits
- Increased power density
- Reduced system size and weight
- Overall lower system cost
Description
The TP70H480G4JSGB 700V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas' Gen IV SuperGaN® platform. It combines high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, featuring over 2kV ESD protection, to deliver exceptional performance and reliability.
Renesas' Gen IV SuperGaN platform uses advanced epitaxial and patented design technologies to simplify manufacturing while improving efficiency compared to silicon. These advancements are achieved through reduced gate charge, lower output capacitance, minimized crossover loss, and decreased reverse recovery charge.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 700 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 480 |
| RDSON (max) (mΩ) | 560 |
| Vth typ (V) | 2 |
| Id max @ 25°C (A) | 5 |
| Qrr typ (nC) | 5.2 |
| Qg typ (nC) | 5.2 |
| Qoss (nC) | 9.2 |
| Ron * Qoss (FOM) | 4416 |
| Ciss (Typical) (pF) | 465 |
| Coss (Typical) (pF) | 8 |
| trr (Typical) (nS) | 27.6 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) |
|---|---|
| PQFN56 | 5 x 6 |
Applications
- Consumer
- Power adapters
- Low power SMPS
- Lighting
- POE Power