Features
- 240mOhm, 700V GaN device in TO-220
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design defined by:
- Wide gate safety margin
- Transient over-voltage capability
- Low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with a commonly used gate driver
- Kelvin source for improved performance
- Pin-to-pin drop in with e-mode with higher Vt for improved noise immunity
Description
The TP70H300G4LSG 700V, 240mΩ, Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV SuperGaN® platform. It integrates high-voltage GaN High Electron Mobility Transistor (HEMT) and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. Renesas GaN achieves higher efficiency than silicon by minimizing gate charge, crossover loss, and reverse recovery charge. The TP70H300G4LSG is available in a PQFN 8x8 package with a common-source configuration.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 700 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 240 |
| RDSON (max) (mΩ) | 312 |
| Vth typ (V) | 2 |
| Id max @ 25°C (A) | 8 |
| Qg typ (nC) | 5.4 |
| Qoss (nC) | 17 |
| Ron * Qoss (FOM) | 4080 |
| Ciss (Typical) (pF) | 487 |
| Coss (Typical) (pF) | 16.3 |
| trr (Typical) (nS) | 29 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) |
|---|---|
| PQFN88 | 8 x 8 |
Applications
- Broad Data Communication
- Industrial
- PV Inverter
- Servo Motor