Features
- 240mOhm, 700V GaN Device in PQFN 5x6 performance package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by:
- 800V transient over-voltage capability
- Operation with E-mode Gate drivers without the need for Zener protection
- 2kV HBM ESD rating
- Low QRR
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
Description
The TP70H300G4JSGB 700V 240mΩ Gallium Nitride (GaN) FET, housed in a 5x6 PQFN performance package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, achieving over 2kV HBM ESD rating, to deliver superior performance, standard drive compatibility, ease of adoption, and enhanced reliability.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 700 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 240 |
| RDSON (max) (mΩ) | 312 |
| Vth typ (V) | 2 |
| Id max @ 25°C (A) | 8 |
| Qg typ (nC) | 5.4 |
| Qoss (nC) | 17 |
| Ron * Qoss (FOM) | 4080 |
| Ciss (Typical) (pF) | 487 |
| Coss (Typical) (pF) | 16.3 |
| trr (Typical) (nS) | 29 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type |
|---|
| PQFN56 |
Applications
- Consumer
- Power adapters
- Low power SMPS
- Lighting
- POE Power