Features
- 70mOhm, 650V GaN device in PQFN 8x8 industry package
- Gen IV technology
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design defined by:
- Wide gate safety margin
- Transient over-voltage capability
- Low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Easy to drive with a commonly used gate driver
- Kelvin source for improved performance
- Pin-to-pin drop in with e-mode with higher Vt for improved noise immunity
Description
The TP65H070G4LSGBEA 650V, 70mΩ, Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV SuperGaN® platform. It integrates high-voltage GaN High Electron Mobility Transistor (HEMT) and low-voltage silicon MOSFET technologies, providing superior reliability and performance. Renesas GaN achieves higher efficiency than silicon by minimizing gate charge, crossover loss, and reverse recovery charge. The TP65H070G4LSGBEA is available in a PQFN88 8-pin industry package with a common-source configuration.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Standard |
| Vds min (V) | 650 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 72 |
| RDSON (max) (mΩ) | 85 |
| Vth typ (V) | 4 |
| Id max @ 25°C (A) | 29 |
| Qg typ (nC) | 11 |
| Qoss (nC) | 64 |
| Ron * Qoss (FOM) | 4608 |
| Ciss (Typical) (pF) | 588 |
| Coss (Typical) (pF) | 64 |
| trr (Typical) (nS) | 47 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) |
|---|---|
| PQFN88 | 8 x 8 |
Applications
- Broad Data Communication
- Industrial
- PV Inverter
- Servo Motor