Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 20A, VGE = 15V, Ta = 25 °C)
- Trench gate and thin wafer technology (G7H series)
- High-speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V, IC = 20A, Rg = 10Ω, Ta = 25 °C, inductive load)
- Operation frequency (20kHz ≤ f ˂ 100kHz) Rating of collector current IC = 30A (at Tc = 100 °C)
- Not guarantee short circuit withstand time
Description
The RJP65T43DPQ-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers through hole mounting and comes in a TO-247A package.
Applications
- Power Factor Correction (PFC) circuit
Applied Filters:
Loading