Features
- Trench gate and thin wafer technology (G8H series)
- Built-in fast recovery diode in one package
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 40A, VGE = 15V, Ta = 25 °C)
- Quality grade: Standard
- High-speed switching
- Short circuit withstands time (10µs min.)
Description
The RBN40H125S1FPQ-A0 1250V, 40A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.
Applications
- UPS
- Welding
- Photovoltaic inverters
- Power converter systems
Applied Filters:
Loading