Features
- VDSS = 100V
- Standard-level gate drive voltage: VGS(th) = 2.0~4.0V
- Low on-state resistance: RDS(on) = 11.1mΩ max.
- ID = 40A
- Low input capacitance
- Low thermal resistance
- Package: μSO8-FL (3x3)
- 100% Avalanche tested
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBE111N10R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The ultra-compact package is approximately 90% smaller than the traditional DPAK, helping reduce board space and enhance design flexibility. Additionally, it uses Wettable Flank leads that provide excellent solderability and support reliable optical inspection.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| VDSS (Max) (V) | 100 |
| ID (A) | 40 |
| RDS (ON) (Max) @10V or 8V (mohm) | 11.1 |
| Pch (W) | 57 |
| Ciss (Typical) (pF) | 1700 |
| Qg typ (nC) | 27 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| μSO8-FL | 3.30 x 3.50 x 0.85 | 8 |
Applications
- Motor Control
- Energy Infrastructure
- Industrial Automation
- DC/DC Power Conversion
- Power Tools
- Robotics