Features
- VDSS = 150V
- Standard-level gate drive voltage: VGS(th) = 2.2~3.7V
- Super low on-state resistance: RDS(on) = 3.9mΩ max.
- ID = 190A
- Low input capacitance
- Low thermal resistance
- Package: TOLT
- 100% Avalanche tested
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBE039N15R1SZPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TOLT |
| VDSS (Max) (V) | 150 |
| ID (A) | 190 |
| RDS (ON) (Max) @10V or 8V (mohm) | 3.9 |
| Pch (W) | 319 |
| Ciss (Typical) (pF) | 5500 |
| Qg typ (nC) | 76 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TOLT | 9.90 x 15.00 x 2.30 | 16 |
Applications
- Motor Control
- Energy Infrastructure
- Industrial Automation
- DC/DC Power Conversion
- Power Tools
- Robotics