Features
- VDSS = 100V
- Standard-level gate drive voltage: VGS(th) = 2.0V to 4.0V
- Super low on-state resistance: RDS(on) = 1.9mΩ max.
- ID(DC) = 230A
- Low input capacitance
- Low thermal resistance
- 100% avalanche tested
- AEC-Q101 qualified
- Production Part Approval Process (PPAP) capable
- Pb-free lead plating: RoHS compliant
- MSL1 classified according to IPC/JEDEC J-STD-020
Description
The RBA019N10R1SBQ4 N‑channel Power MOSFET features REXFET-1 split-gate technology and is available in a TOLL package. The TOLL package features compact, leadless designs with wettable flanks to support enhanced thermal performance, reliability, and ease of assembly.
Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and high switching performance, making it ideal for high-power and high-frequency applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TOLL |
| Gate Level | Standard |
| VDSS (Max) (V) | 100 |
| ID (A) | 230 |
| RDS (ON) (Max) @10V (mohm) | 1.9 |
| Pch (W) | 405 |
| Ciss (Typical) (pF) | 11000 |
| Qg typ (nC) | 140 |
| Series Name | REXFET-1 |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TOLL | 15 x 9.9 x 2.3 | 8 |
Applications
- 48V battery system and motor drive
- Small traction (2-wheel, 3-wheel vehicle)
- Onboard charger (OBC)
- Charging station
- Low voltage DC/DC