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Features

  • Super low on-state resistance RDS(on)1 = 7.9 mΩ MAX. (VGS = 10 V, ID = 30 A)
  • Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified

Description

NP60N06VLK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Parameters

AttributesValue
Qualification LevelAutomotive
Nch/PchNch
Channels (#)1
Standard Pkg. TypeTO-263 / D2PAK
VDSS (Max) (V)60
ID (A)60
RDS (ON) (Max) @10V or 8V (mohm)7.9
RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm)12
Pch (W)105
Ciss (Typical) (pF)2400
Qg typ (nC)37
Series NameNP Series

Package Options

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
MP-3ZP6 x 6 x 2.653

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