Features
- Channel temperature 175 degree rating
- Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A)
Description
Support is limited to customers who have already adopted these products.
The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263 / D2PAK |
| Gate Level | Logic |
| VDSS (Max) (V) | 40 |
| ID (A) | 110 |
| RDS (ON) (Max) @10V (mohm) | 1.8 |
| RDS (ON) (Max) @4.5V (mohm) | 3.2 |
| Pch (W) | 288 |
| Ciss (Typical) (pF) | 14500 |
| Qg typ (nC) | 230 |
| Series Name | NP Series |
Package Options
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-25ZP | 10 x 9 x 4.9 | 3 |
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