Features
- Low on-state resistance
RDS(on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A) - Low input capacitance
Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) - High current
ID(DC) = ±100 A - RoHS Compliant
Description
The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Parameters
| Attributes | Value |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-220 |
| Gate Level | Standard |
| VDSS (Max) (V) | 40 |
| ID (A) | 100 |
| RDS (ON) (Max) @10V (mohm) | 3.7 |
| Pch (W) | 119 |
| Ciss (Typical) (pF) | 5550 |
| Qg typ (nC) | 100 |
| Series Name | N0 Series |
Package Options
| Pkg. Type | Lead Count (#) |
|---|---|
| TO-220 | 3 |
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