概览

The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4. 5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14. 7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on and turn-off paths. The ISL71040M operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld Thin Dual Flat No-Lead (TDFN) plastic package.

ISL71040M Functional Diagram
ISL71040M Functional Diagram
  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level) Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
    • Independent outputs for adjustable turn-on/turn-off speeds
  • NiPdAu-Ag Lead finish (Sn-free, Pb-free)
  • Moisture Sensitivity Level (MSL) Rating: 1
  • Passes NASA Low Outgassing Specifications
  • Full military temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C
  • Characterized radiation levels
    • Low Dose Rate (LDR) <0.01rad(Si)/s : 30krad(Si)
    • No SEB/L, VDD = 16.5V : 43MeV•cm2/mg

文档

= 相关文档
类型 文档标题 日期
数据手册
ISL71040M Datasheet
PDF 762 KB
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报告
ISL70040SEH, ISL73040SEH & ISL71040M Neutron Test Report
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8 items

设计和开发

软件与工具
iSim:PE Offline Simulation Tool
iSim Personal Edition (iSim:PE) speeds the design cycle and reduces risk early in any project, identifying parts that can be used in current as well as next-generation designs.
下载
ISL70040SEH, ISL73040SEH and ISL71040M Steady State iSim Model
 Simulator 瑞萨电子
1 item

开发板与套件

ISL71040MEV1Z Evaluation Board

ISL71040MEV1Z

评估
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Radiation Tolerant Low-Side GaN FET Driver Evaluation Board

The ISL71040MEV1Z evaluation platform is designed to evaluate the ISL71040M. The ISL71040M is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated...

特色文件:
ISL71040MEV1Z Evaluation Board Manual
ISL71043MEVAL1Z Evaluation Board

ISL71043MEVAL1Z

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Radiation Tolerant Single-Ended Current Mode PWM Controller Evaluation Board

The ISL71043MEVAL1Z evaluation platform is designed to evaluate the ISL71043M and ISL71040M in a flyback power supply configuration.

The ISL71043M is a...

特色文件:
ISL71043MEVAL1Z Evaluation Board Manual

ISLVERSALDEMO2Z

演示
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Power Management Reference Design for AMD Versal XQRVC1902

The ISLVERSALDEMO2Z demo board provides the power management for the AMD Xilinx Space Grade Versal ACAP AI Core VC1902 using Renesas' Radiation Hardened Power...

特色文件:
ISLVERSALDEMO2Z Demonstration Board Manual

ECAD 模块

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

扩展 ECAD 模块
Diagram of ECAD Models

产品选择

    Processing table
    Pkg. Type
    Carrier Type
    MOQ
    Moisture Sensitivity Level (MSL)
    购买 / 样片
    器件号
    ISL71040MRTZ
    circle有效
    memory
    spa
    view_in_ar
    可提供样片
    		 TDFN Tube 25 1 获取样片,
    ISL71040MRTZ-T
    circle有效
    memory
    spa
    view_in_ar
    可提供样片
    		 TDFN Reel 6000 1 获取样片,
    ISL71040MRTZ-T7A
    circle有效
    memory
    spa
    view_in_ar
    可提供样片
    		 TDFN Reel 250 1 获取样片,
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