概览

简介

The ISL70591SEH, ISL73591SEH, ISL70592SEH, and ISL73592SEH are radiation hardened precision 100µA and 1mA current source ICs. The devices have excellent accuracy of ±1% over a wide operating voltage range of 3V to 40V and over a temperature range of -55 °C to +125 °C. Fabricated with the Renesas proprietary PR40 Silicon On Insulator (SOI) process, the devices are immune to single event latch-up. The high output impedance of the devices makes them insensitive to voltage drops across long lines. They can withstand a forward operating voltage of 40V and a reverse voltage of -0.5V. The ISL7x591SEH and ISL7x592SEH are two terminal floating current sources allowing them to be used in high-side, low-side, and dual-side load applications such as sensor excitation, biasing networks, low voltage references, floating voltage references, and ramp generators. The current sources were primarily designed for thermistor and other sensor excitation applications widely used in space crafts. The ISL7x591SEH and ISL7x592SEH are available in a 4 Ld ceramic flatpack and die forms. The temperature range is -55 °C to +125 °C.

特性

  • Electrically screened to DLA SMD 5962-18217
  • Wide operating voltage range: 3V to 40V
  • High initial accuracy (+V = 20V at +25 °C): ISL7x591SEH: ±0.34%, ISL7x592SEH: ±0.30%
  • High output impedance: ISL7x591SEH: 189MΩ (typical), ISL7x592SEH: 14MΩ (typical)
  • Completely floating: No ground connection
  • Radiation acceptance testing - ISL70591SEH and ISL70592SEH
    • High dose rate (50-300rad(Si)/s): 100krad(Si)
    • Low dose rate (0.01rad(Si)/s): 75krad(Si)
  • Radiation acceptance testing - ISL73591SEH and ISL73592SEH: Low dose rate (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness
    • No SEB/SEL LETTH, +V = 35V: 86MeV•cm2/mg
    • SET duration (time recovery) ≤ 125µs

产品对比

应用

应用

  • Sensor excitation
  • Biasing network
  • Low voltage references
  • Ramp generators

文档

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数据手册 PDF 780 KB
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报告 PDF 716 KB
白皮书 PDF 533 KB
应用文档 PDF 338 KB
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