The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. The HM-6551/883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.
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类型 | 文档标题 | 日期 |
数据手册 | PDF 720 KB | |
手册 | PDF 4.85 MB | |
产品变更通告 | PDF 323 KB | |
Product Advisory | PDF 282 KB | |
产品变更通告 | PDF 174 KB | |
产品变更通告 | PDF 151 KB | |
应用文档 | PDF 338 KB | |
应用文档 | PDF 224 KB | |
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