The RBN75H125S1FP4-A0 1250V, 75A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-247A package type.
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Pkg. Type |
Carrier Type |
购买 / 样片 |
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器件号 | |||
TO-247plus | 获取样片, |