Renesas' inverter insulated gate bipolar transistors (IGBTs) for industry and home appliances enable both high reliability and high efficiency with high short circuit tolerance (tsc) and low saturation voltage, collector-emitter or VCE(sat).

Features

  • Low VCE(sat), high tsc
  • Low VF FRD
  • Standard package and wafer/di

Applications

  • Industry and general purpose home appliances
  • Power supply DC/AC, motor drive
    • Power conditioner
    • Industry actuator
    • UPS air conditioner

IGBT Circuit for Air Conditioner

IGBTs Improve High Reliability

Renesas IGBTs improve short circuit tolerance and offer Low VCE(sat).

IGBTs Improves Tsc and Low VCE(sat)

650V IGBT Strengths

IGBT Performance Comparison

Renesas 650V IGBTs achieve both high reliability and low loss. Here we show the output characteristics (Ic-VCE) and the leading levels of performance

IGBTs Output Characteristics IC to VCE

High Reliability & Low VCE(sat) Comparison

To realize high performance, thin wafer technology and high current density is needed. Here we show short circuit tolerance (tsc) and low saturation voltage, collector-emitter (VCE(sat)).

IGBT Tsc to VCE(sat) Competition Comparision

1250V IGBT Strengths

1250V IGBT Strengths Comparison Chart

*Measured on ceramic package

IGBT Performance Comparison

Renesas' 1250V IGBTs offer leading levels of output performance (Ic-VCE) compared to the competition.

1250V IGBT RJP1CS28 Output Performance Comparison

Switching Loss Comparison

Renesas' 1250V IGBTs provide better switching loss compared to the competition.

1250V IGBT RJP1CS28 Switching Loss Comparison

Power IGBTs for Power Factor Correction (PFC)

Grade
(Market Share)
Circuit System
(Market Share)
Package tsc Ic Features FRD Product Series
Low
(under 80%)
Partial Switching
(75%)
*Others 5%
TO-3PF
(TO-3PFM)
W/O 25A-30A Ultra-low
VCE(sat)
Freq. >100Hz
W/O G7H T5 Series
  • 30A: RJP65T54DPM
Middle ~ High
(over 20%)
Full Switching
(16%)
*Others 4%
TO-247
(TO-3P)
W/O 20A-45A Ultra-Fast Turn-on
Freq. >20kHz
W/O G7H T4 Series
  • 20A: RJP65T43DPM
  • 40A: RJH65T46DPQ
  • 45A: RJH65T47DPQ

IGBTs for Partial Switching PFC

IGBT for PFC Partial Switching System

IGBTs for Full Switching PFC (Lower: Interleave)

IGBT for PFC Full Switching System

System Features (Pros/Cons)

  Partial Full
Cost Cheaper More expensive
Reactor Larger Smaller
Power Factor Good Much better
Efficiency Worse Better
EMI Noise Lower Slightly higher

IGBTs for Partial Switching PFC

Features

  • Low loss VCE(sat) = 1.35V (typ.)
  • Isolated full-mold package: TO-3PF
  • High current tolerant: Icp = 200A

IGBT for Partial Switching System Circuit Diagram

Competitive Comparison - Partial Switching PFC

Part Number VCES VGES IC [A] IC(peak) VCE(sat) Tj max Package
[V] [V] 25 °C 100 °C [A] [V] [C]
RJP65T54DPM 650 ±30 60 30 200 1.35(30A) 175 TO-3PF
RJH65T14DPQ-A0 650 ±30 100 50 120 1.4(30A) 175 TO-3PFM
Company F 600 ±20 80 40 100 1.5(30A) 175 TO-247

IGBT for Power Factor Correction Low Loss by Low VCE(sat)

Benefit - Removes Isolation Sheet

Renesas IGBTs for partial switching PFC offer several benefits including reduced cost, improved isolation level and freedom from the risk of seat destruction.

IGBT for Power Factor Correction Isolation Sheet Removal

IGBTs for Full Switching PFC

Features

  • VCES = 650V
  • Low noise and high-speed switching
  • Isolated full-mold package: TO-3PF - For low output
  • Non-isolated package: TO-247 - For high output

Application

Full Switching PFC (Interleave)

IGBT for PFC Full Switching Circuit Diagram

Competitive Comparison - Full Switching PFC

Part Number VCES VGES IC [A] VCE(sat) Tj max Package
[V] [V] 25 °C 100 °C [V] [C]
RJP65T43DPM 650 ±30 40 20 1.8(20A) 175 TO-3PFM
RJH65T46DPQ-A0 650 ±30 80 40 1.8(40A) 175 TO-247
RJH65T47DPQ-A0 650 ±30 90 45 1.8(45A) 175 TO-247
Company B 650 ±20 80 40 1.9(40A) 175 TO-3PN

Application Performance Comparison - IGBTs for Full Switching PFC

Renesas PFC Interleave Evaluation Board

Renesas PFC Interleave Evaluation Board

Renesas IGBT for PFC Efficiency Comparison

IGBT for PFC Efficiency Comparison

IGBT for PFC Full Switching Requirements

Power IGBTs for Induction Heating (IH)

Renesas' IGBTs for IH reduce tail loss (Etail) for current resonance circuits (soft switching).

    Low-middle grade
(Rice Cooker/Microwave)
High grade
(IH Cooktop)
Features VCES 1100V~1350V 600V
Circuit Structure
IGBT Voltage Resonance Circuit Diagram

IGBT Current Resonance Circuit Diagram
IGBT
Requirement Characteristics
Low Etail
Low VCE(sat)
with FRD
Freq.
30kHz~
Ultra-low Etail
Low VCE(sat)
Fast SW
with FRD
Freq.
~20kHz
Low Etail
Ultra-low VCE(sat)
Fast SW
with FRD
Product
Series
G7H RC-IGBT G7H T0 Series:
RJH60T04DPQ-A1
(30A)
G7H T1 Series:
RJH65T14DPQ-A0
(50A)

G7H Low Etail Characteristics for Soft Switching

IGBT Etail Measurement Circuit.jpg

Test Conditions: Vcc = 300V, Vg = 20V, Rg = 15Ω, Tc = 125 °C, L = 100uH

Switching OFF Waveform

Etail Comparison with Soft Switching Test Circuit

Etail Comparison Soft Switching Circuit

PartNumber Etail ttail Itail
[uJ] [ns] [A]
RJH60T04DPQ-A1 159.5 199.2 6.4
Competitor 193.1 241.1 10.6

文档和下载

文档标题 其他语言 类型 文档格式 文件大小 日期
其他
Discrete & Power Devices Brochure 手册 PDF 3.72 MB
Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog 手册 PDF 7.66 MB