概览

简介

The RMLV0816BGSD is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSD has realized higher density, higher performance and low power consumption. The RMLV0816BGSD offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 52pin TSOP (II).

特性

  • Single 3V supply: 2.4V to 3.6V
  • Access time: Power supply voltage from 2.7V to 3.6V: 45ns (max.) Power supply voltage from 2.4V to 2.7V: 55ns (max.)
  • Current consumption: Standby: 0.45µA (typ.)
  • Equal access and cycle times
  • Common data input and output Three state output
  • Directly TTL compatible All inputs and outputs
  • Battery backup operation

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 337 KB 日文
指南 PDF 182 KB 日文
指南 PDF 471 KB 日文
指南 PDF 1.27 MB 日文
Product Reliability Report PDF 202 KB
Package Outline Drawing PDF 69 KB
产品变更通告 PDF 1.04 MB 日文
产品变更通告 PDF 1.07 MB 日文
手册 PDF 3.28 MB
9 items

设计和开发

模型