概览

简介

The R1RP0408DI Series is a 4-Mbit High-Speed static RAM organized 512-k word × 8-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ.

特性

  • Single 5.0 V supply: 5.0 V ± 10 %
  • Access time: 12 ns (max)
  • Completely static memory: No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL compatible: All inputs and outputs
  • Operating current: 130 mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current: 5 mA (max)
  • Center VCC and VSS type pin out
  • Temperature range: −40 to +85°C

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 343 KB 日文
指南 PDF 182 KB 日文
指南 PDF 471 KB 日文
指南 PDF 1.27 MB 日文
Product Reliability Report PDF 202 KB
产品变更通告 PDF 1.04 MB 日文
产品变更通告 PDF 885 KB 日文
手册 PDF 3.28 MB
Package Outline Drawing PDF 21 KB
9 items

设计和开发

模型