瑞萨电子的 DDR4 暂存时钟驱动器、数据缓冲器和温度传感器构成行业首个完整芯片组,可用于 DDR4 暂存双列直插存储器模块 (RDIMM) 和低负载双列直插存储器模块 (LRDIMM)。 随着 DDR4 的数据速率提高至 3.2 Gb/s 以上,RDIMM 和 LRDIMM 作为高速可扩展存储器技术的明显优势将有望推动该技术在众多存储器密集型计算和存储应用中的运用。

瑞萨还提供工业温度 DDR4 RCD,可支持现有 DDR4 应用的温度(低至-40°C,高至 105°C)

通过灵活的 I/O控制、计时和电压校准及控制寄存器可编程性,瑞萨电子DDR4 暂存时钟驱动器 和数据缓冲器 可在所有 JEDEC® 定义的 DDR4 LRDIMM 和 RDIMM 拓扑上实现密度更高和更快数据速率。 DIMM 拓扑配置和 DRAM 信息被存储在 瑞萨电子的温度传感器 EEPROM 中。

通过适用于所有 DDR 产品系列的芯片组的成功推出以及对存储器接口芯片组的深刻认识,瑞萨电子的器件将为您的应用提供可靠性能。

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How DDR4 LRDIMMs Transcend RDIMMs in Today's Enterprise Servers

A white paper authored by IDT and Micron details research into memory and bandwidth for today's high-performance servers. LRDIMMS and RDIMMS traditionally have been seen as complimentary, with the former targeting applications requiring deeper memory and the latter for applications requiring higher bandwidth. The introduction of 8-gigabit DRAMS has resulted in a growing number of Internet applications benefiting from both deeper memories and higher bandwidth. This paper shows how 32 GB 2RX4 LRDIMMs transcend similar RDIMMs to meet the needs of today’s data center enterprise servers, by providing an optimal combination of deeper memory and higher data bandwidth, even at mainstream module densities.

To download the white paper, and for more information about IDT's DDR4 memory solutions, visit http://www.idt.com/go/DDR4.