NP29N04QUK

40 V – 30 A – Dual N-channel Power MOS FET

Product Status: Product Inquiry

OVERVIEW

NP29N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

KEY FEATURES

    • Super low on-state resistance
      RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 15 A)
    • Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
    • Designed for automotive application and AEC-Q101 qualified
    • Small size package 8-pin HSON dual

PARAMETRICS

Parameters
NP29N04QUK
Basic Information
Production Status
Product Inquiry
PLP
-
Package Type
HSON-8
Nch/Pch
Nch
Number of Channels
Dual
Automotive
YES
VDSS (V) max.
40
ID (A)
30
RDS (ON) (mohm) max. @10V or 8V
10.1
Ciss (pF) typ.
1000
Vgs (off) (V) max.
4
VGSS (V)
20
Pch (W)
44
Application
Automotive Use
Mounting Type
Surface Mount
Series Name
NP Series
QG (nC) typ.
19

You can find an explanation of orderable part numbers here.

 

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