This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性

  • Logic level operation (4 to 6 V Gate drive)
  • High endurance capability against to the short circuit
  • Built-in the over temperature shutdown circuit
  • Latch type shutdown operation (Need 0 voltage recovery)

产品选择

下单器件型号 Part Status Buy Sample
HAF2017L
Active
Availability

文档和下载

文档标题 其他语言 类型 文档格式 文件大小 日期
数据手册与勘误表
HAF2017(L) HAF2017(S) 日本語 数据手册 PDF 147 KB
应用指南 &白皮书
功率MOS FET 应用说明 应用文档 PDF 2.71 MB
Power MOS FET APPLICATION NOTE 日本語 应用文档 PDF 814 KB
PCN / PDN
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 产品变更通告 PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package 日本語 产品变更通告 PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package 日本語 产品变更通告 PDF 1.46 MB
其他
Product Scout Automotive 手册 PDF 3.25 MB
PowerMOSFET & IPD 手册 PDF 2.24 MB
瑞萨 分立器件 综合产品目录 晶体管/二极管/双向晶闸管/晶闸管 手册 PDF 11.56 MB
Renesas Semiconductor Lead-Free Packages 手册 PDF 1.32 MB