概览

简介

The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

特性

  • Low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 16.5 A)
  • Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 223 KB
应用文档 PDF 3.23 MB 日文
指南 PDF 1.71 MB
Product Reliability Report PDF 223 KB
手册 PDF 2.24 MB
5 items

设计和开发

模型