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The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

特性

  • Low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 16.5 A)
  • Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

产品选择

下单器件型号 Part Status Pkg. Type Carrier Type Buy Sample
NP33N06YDG-E1-AY
Active HSON Embossed Tape
Availability
NP33N06YDG-E2-AY
Active HSON Embossed Tape
Availability

文档和下载

文档标题 其他语言 类型 文档格式 文件大小 日期
数据手册与勘误表
NP33N06YDG Data Sheet 数据手册 PDF 223 KB
使用指南与说明
Power Devices Part Number Guide 指南 PDF 1.89 MB
其他
PowerMOSFET & IPD 手册 PDF 2.24 MB