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The 2SK2857C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4. 0 V power source.

特性

  • Directly driven by a 4.0 V power source.
  • Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)

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description文档

文档标题 language 类型 文档格式 文件大小 日期
数据手册与勘误表
star 2SK2857C Data Sheet 数据手册 PDF 190 KB
使用指南与说明
Power Devices Part Number Guide 指南 PDF 2.00 MB
其他
PowerMOSFET & IPD 手册 PDF 2.24 MB