概览

简介

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The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.

特性

  • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)
  • Low Ciss: Ciss = 4600 pF TYP.
  • Built-in gate protection diode

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 282 KB
指南 PDF 1.71 MB
手册 PDF 2.24 MB
3 items

设计和开发

模型