ルネサスの耐放射線設計がなされたパワーデバイスは、航空宇宙および過酷環境で使用されるFPGA、ASIC、マイクロプロセッサ、マイクロコントローラが要する厳しい電圧精度を実現しています。当社のソリューションは、入力電圧、負荷電流の変動、スイッチング・ノイズ、大きな負荷変動へのレギュレーション精度を可能にし、混合放射線被曝率やその他の過酷な環境での変異においても高い信頼性を実証しています。

製造と試験に関する情報

Renesasは、信頼性、効率、および精度に優れた耐放射線特性パワー製品の提供において高い実績を挙げています。これらの製品は、過酷な環境に必要な厳密な電圧精度を実現します。

低線量率イオン化照射が半導体に与える影響は、宇宙機器にとって重要な課題となっています。Renesasは、現在の高線量率耐性試験に対する補完としてウエハごとの低線量率耐性試験を行なうことにより、この市場に対応しています。

Renesasは、数社しかないRHA国防補給庁(陸および海) QMLサプライヤの1社です。Renesasの耐放射線SMD製品はすべてMIL-PRF-38535/QMLに準拠し、バーンイン試験に100%合格しています。

カテゴリ

Rad Hard GaN FETs

GaN FETにより、パワーマネジメント・システムを高いスイッチング周波数で動作

Rad Hard Linear Regulators

Linear regulators for highly reliable performance in harsh radiation environments

Rad Hard MOSFET Drivers

MOSFET drivers for highly reliable performance in space and harsh radiation environments

Rad Hard Power Sequencing

ICs that drive POL regulators that power high-performance FPGAs and multi-rail power systems

Rad Hard Power Supply Supervisory

Reduce the complexity required to monitor supply voltages in microprocessor systems

Rad Hard Source Drivers

Products to reduce the size, weight and power of satellite command and telemetry systems

Rad Hard Switching Controllers

Rad hard PWM controllers suitable for a wide range of power conversion applications

Rad Hard Switching Regulators

Radiation and SEE tolerant and SEE hardened sync buck regulators with integrated MOSFETs

耐放射線特性 GaN ドライバ

航空宇宙アプリケーションにおいてエンハンスメントモードGaN FETを高精度で駆動させるGaN FETドライバ

耐放射線特性ロード・スイッチ

マルチレールパワーシステムでの電源レールオン/オフに使用されるロードスイッチ

ドキュメント

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ビデオ&トレーニング

Radiation Hardened GaN Products and Technology

Renesas, a leading solution provider in the satellite and high reliability industry, discusses a technology leap into Gallium Nitride with its family of Intersil GaN products. The ISL70024SEH is designed from the ground up with space applications in mind to provide steady and reliable performance when exposed to total ionizing dose (TID) or heavy ions. The Intersil GaN driver and FET together allow more efficient switching, higher frequency operation, reduced gate drive voltage and a smaller solution size compared to their traditional silicon counterparts.

Transcript

Renesas is a leading solution provider in the satellite and high reliability industry, and is now introducing a technology leap into Gallium Nitride with its new family of GaN products.

GaN is a wideband gap material and compared to silicon, the drain to source distance can be a factor of ten smaller which translates to a much smaller RDS(on). While silicon FETs are very close to their theoretical limit of channel length, GaN has much more room for improvement. GaN's advantages to the power supply designers include size, weight and efficiency.

The size and weight reduction of using GaN over silicon comes from two factors. The first is that heat-sinking requirements are not as much due to GaN's reduced parasitics. And the second, is the use of smaller output filters due to being able to switch at higher frequencies. This allows GaN to achieve excellent efficiencies at a compact solution size.

Another plus point, when it comes to ionizing radiation in contrast to silicon FETs, GaN FETS do not have a gate oxide layer. That means radiation cannot form traps in the gate oxide that would otherwise shift the gate to source threshold voltage.

As you can see in the graph, the current technology of GaN is already orders of magnitude better and figure of merit, and this will only get better with time. To be able to take full advantage of GaN FETs, you'll need a good gate driver to go with it. So Renesas is now introducing the industry's first radiation hardened low-side GaN FET driver.

A GaN FET gate driver needs to provide a well-regulated gate voltage that never exceeds 6V under all conditions. The ISL70040SEH regulates a 4.5V gate driver in order to meet the voltage margins of the space and high reliability industry.

Here we have the ISL70040SEH low-side driver and the ISL70024SEH, the 200V GaN FET, in action. The VDD is set to 5V and the inputs are driven with a function generator set to a frequency of 500kHz. As you can see, it has fast transition times with minimal overshoot on the rising and falling edges with a well-regulated 4.5V gate drive voltage.

It is designed from the ground up with space applications in mind to provide steady and reliable performance when exposed to total ionizing dose (TID) or heavy ions. This first graph shows minimal shift in V drive, the gate drive voltage across TID for both high dose rate and low dose rate. The next graph shows how steady the operating supply current is across TID. For both gate drive voltage and supply current, we are well within the spec limits. From a single event transient perspective, at an LET limit of 86MeV, the ISL70040SEH had a very small cross section of ≤1.7 x 10-6cm2 for dynamic switching, and had no SETs for static input, high or low.

GaN FETS are a very good fit for satellite applications but require a good gate driver to realize their full potential. Together they allow more efficient switching, higher frequency operation, reduced gate drive voltage and a smaller solution size compared to their traditional silicon counterparts.

For more information, datasheets, TID/SEE test reports, or to order parts or evaluation boards, please visit our Rad Hard GaN FET product page.