ルネサスの製品開発手法は、軍事および航空宇宙産業の主要サプライヤーとして、困難な環境で最も高い基準の信頼性と性能を満たす製品設計経験を反映しています。
ルネサスの製品開発手法は、軍事および航空宇宙産業の主要サプライヤーとして、困難な環境で最も高い基準の信頼性と性能を満たす製品設計経験を反映しています。
低線量率イオン化照射が半導体に与える影響は、宇宙機器にとって重要な課題となっています。 ルネサスは、現在の高線量率耐性試験に対する補完としてウエハごとの低線量率耐性試験を行なうことにより、この市場に対応しています。
ルネサスは、数社しかないRHA国防補給庁(陸および海) QMLサプライヤの1社です。 ルネサスの耐放射線SMD製品はすべてMIL-PRF-38535/QMLに準拠し、バーンイン試験に100%合格しています。
サブカテゴリ |
Temp. Range |
Pkg. Type |
Lead Count (#) |
Pkg. Dimensions (mm) |
Price (USD) | 1ku |
|
---|---|---|---|---|---|---|
型名 | ||||||
Microcircuit, Digital, CMOS, Programmable Interrupt Controller, Monolithic Silicon | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 28 | 36.8 x 13.2 x 0.00 | |
Microcircuit, Digital, CMOS, Programmable Interrupt Controller, Monolithic Silicon | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP, CLCC | 28 | 11.4 x 11.4 x 0.00, 36.8 x 13.2 x 0.00 | |
Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 20 | 24.6 x 7.3 x 0.00 | |
CMOS 16-Bit Microprocessor | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C, 0 to +70°C | CERDIP | 40 | 52.1 x 13.2 x 0.00 | |
CMOS 16-Bit Microprocessor | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 40 | 52.1 x 13.2 x 0.00 | |
CMOS 8-Bit/16-Bit Microprocessor | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C, 0 to +70°C | CERDIP, PDIP | 40 | 52.1 x 13.2 x 0.00, 52.1 x 14.0 x 4.06 | 45.82 |
CMOS 8-Bit/16-Bit Microprocessor | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 40 | 52.1 x 13.2 x 0.00 | |
CMOS High Performance Programmable DMA Controller | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 40 | 52.1 x 13.2 x 0.00 | |
CMOS Serial Controller Interface | MIL-STD-883 Microprocessors and Peripherals | -40 to +85°C, -55 to +125°C | CERDIP, CLCC, PLCC | 28 | 11.4 x 11.4 x 0.00, 36.8 x 13.2 x 0.00 | 140.9 |
CMOS Programmable Interval Timer | MIL-STD-883 Microprocessors and Peripherals | -40 to +85°C, -55 to +125°C, 0 to +70°C | CERDIP, CLCC, PDIP, PLCC | 24, 28 | 11.4 x 11.4 x 0.00, 31.8 x 13.2 x 0.00, 31.8 x 14.0 x 4.06 | 11.64 |
CMOS Programmable Peripheral Interface | MIL-STD-883 Microprocessors and Peripherals | -40 to +85°C, -55 to +125°C, 0 to +70°C | CERDIP, CLCC, MQFP, PDIP, PLCC | 40, 44 | 10.0 x 10.0 x 2.02, 16.5 x 16.5 x 0.00, 52.1 x 13.2 x 0.00 and more... |
8.382 |
CMOS Priority Interrupt Controller | MIL-STD-883 Microprocessors and Peripherals | -40 to +85°C, -55 to +125°C, 0 to +70°C | CERDIP, PDIP, PLCC | 28 | 11.4 x 11.4 x 0.00, 35.6 x 14.0 x 4.06, 36.8 x 13.2 x 0.00 | 11.76 |
CMOS Octal Latching Bus Driver | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 20 | 24.6 x 7.3 x 0.00 | |
CMOS Clock Generator Driver | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 18 | 22.6 x 7.3 x 0.00 | |
CMOS Octal Inverting Bus Transceiver | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 20 | 24.6 x 7.3 x 0.00 | |
CMOS Bus Controller | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 20 | 24.6 x 7.3 x 0.00 | |
CMOS Bus Arbiter | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 20 | 24.6 x 7.3 x 0.00 | |
15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output | Harsh Environment Amplifiers | -55 to +125°C | PDIP, SOICN | 8 | 4.9 x 3.9 x 0.00, 9.7 x 6.6 x 3.94 | 2.113 |
15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output | Harsh Environment Amplifiers | -55 to +125°C | SOICN | 8 | 4.9 x 3.9 x 0.00 | 3.394 |
4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output | Harsh Environment Amplifiers | -55 to +125°C | PDIP, SOICN | 8 | 4.9 x 3.9 x 0.00, 9.7 x 6.6 x 3.94 | 1.739 |
4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output | Harsh Environment Amplifiers | -55 to +125°C | PDIP, SOICN | 8 | 4.9 x 3.9 x 0.00, 9.7 x 6.6 x 3.94 | 1.669 |
0.5MHz, Low Supply Voltage, Low Input Current BiMOS Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | PDIP | 8 | 9.7 x 6.6 x 3.94 | 4.609 |
0.5MHz, Low Supply Voltage, Low Input Current BiMOS Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | SOICN | 8 | 4.9 x 3.9 x 0.00 | 12.47 |
CMOS 8-Bit Microprocessors | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | SBDIP | 40 | 50.8 x 15.1 x 2.41 | |
3.2 Microsecond Sample and Hold Amplifiers | MIL-STD-883 Sample and Hold Converters | -55 to +125°C | CERDIP | 14 | 19.3 x 7.3 x 0.00 | |
20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | CAN, CERDIP | 8 | 0.0 x 9.1 x 0.00, 9.7 x 6.3 x 0.00 | |
20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | CAN | 8 | 0.0 x 9.1 x 0.00 | |
12MHz, High Input Impedance Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | CAN | 8 | 0.0 x 9.1 x 0.00 | |
100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | CAN | 8 | 0.0 x 9.1 x 0.00 | |
4MHz, High Supply Voltage Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | CAN, CERDIP | 8 | 0.0 x 9.1 x 0.00, 9.7 x 6.3 x 0.00 | |
Precision Quad Comparators | Harsh Environment Comparators | -55 to +125°C | CERDIP | 16 | 19.3 x 7.3 x 0.00 | |
Precision Quad Comparators | Harsh Environment Comparators | -55 to +125°C | CERDIP | 16 | 19.3 x 7.3 x 0.00 | |
Precision Quad Comparator | MIL-STD-883 Comparators | -55 to +125°C | CERDIP, CLCC | 16, 20 | 8.9 x 8.9 x 0.00, 19.3 x 7.3 x 0.00 | |
110MHz, High Slew Rate, High Output Current Buffer | Harsh Environment Amplifiers | -40 to +85°C, -55 to +125°C, 0 to +70°C | CAN, SOICN | 8 | 0.0 x 9.1 x 0.00, 4.9 x 3.9 x 0.00 | 10.07 |
Dual and Quad, 8MHz and 60MHz, Low Noise Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | CERDIP | 8 | 9.7 x 6.3 x 0.00 | |
Dual and Quad, 8MHz and 60MHz, Low Noise Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | CERDIP, CLCC | 14, 20 | 8.9 x 8.9 x 0.00, 19.3 x 7.3 x 0.00 | |
120MHz, Ultra-Low Noise Precision Operational Amplifiers | Harsh Environment Amplifiers | -55 to +125°C | CERDIP | 8 | 9.7 x 6.3 x 0.00 | |
1 Microsecond Precision Sample and Hold Amplifier | Harsh Environment Sample and Hold Converters | -55 to +125°C, 0 to +70°C | CERDIP, SOICW | 14, 16 | 10.3 x 7.5 x 0.20, 19.3 x 7.3 x 0.00 | 20.25 |
650ns Precision Sample and Hold Amplifier | Harsh Environment Sample and Hold Converters | -55 to +125°C | CLCC | 20 | 8.9 x 8.9 x 0.00 | |
CMOS Manchester Encoder-Decoder | Harsh Environment Data Communications ICs | -55 to +125°C | CERDIP, CLCC | 24, 28 | 11.4 x 11.4 x 0.00, 31.8 x 13.2 x 0.00 | |
CMOS Universal Asynchronous Receiver Transmitter (UART) | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 40 | 52.1 x 13.2 x 0.00 | |
CMOS Universal Asynchronous Receiver Transmitter (UART) | MIL-STD-883 Microprocessors and Peripherals | -55 to +125°C | CERDIP | 40 | 52.1 x 13.2 x 0.00 | |
CMOS Manchester Encoder-Decoder | MIL-STD-883 Data Communications ICs | -55 to +125°C | CERDIP | 20 | 24.6 x 7.3 x 0.00 | |
Ultra High Frequency Transistor Arrays | Harsh Environment Transistor Arrays | -55 to +125°C | SOICN | 14 | 8.7 x 3.9 x 0.00 | |
Ultra High Frequency Transistor Arrays | Harsh Environment Transistor Arrays | -55 to +125°C | SOICN | 16 | 9.9 x 3.9 x 0.00 | 6.695 |
Ultra High Frequency Transistor Arrays | Harsh Environment Transistor Arrays | -55 to +125°C | QFN, SOICN | 16 | 3.0 x 3.0 x 0.90, 9.9 x 3.9 x 0.00 | 7.831 |
Dual/Quad SPST, CMOS Analog Switches | Harsh Environment Switches/MUXs/Crosspoints | -40 to +85°C, -55 to +125°C, 0 to +70°C | CERDIP, PDIP, SOICN | 16 | 9.9 x 3.9 x 0.00, 19.0 x 6.6 x 3.94, 19.3 x 7.3 x 0.00 | 5.727 |
High Speed, Quad SPST, CMOS Analog Switch | Harsh Environment Switches/MUXs/Crosspoints | -40 to +85°C, -55 to +125°C, 0 to +70°C | CERDIP, SOICW | 16 | 10.3 x 7.5 x 0.20, 19.3 x 7.3 x 0.00 | 9.873 |
CMOS Analog Switches | Harsh Environment Switches/MUXs/Crosspoints | -40 to +85°C, -55 to +125°C | CERDIP, SOICN | 14 | 8.7 x 3.9 x 0.00, 19.3 x 7.3 x 0.00 | 14.69 |
CMOS Analog Switches | Harsh Environment Switches/MUXs/Crosspoints | -55 to +125°C | CERDIP | 16 | 19.3 x 7.3 x 0.00 |
Over the past 19 years, the space industry has placed a higher value on understanding the effects that long-term, low dose radiation can have on ICs. Intersil's radiation testing specialist Nick van Vonno discusses why this shift has occurred and what we are doing to address this change.
There are many different types of radiation, and indeed Intersil addresses two of these. Intersil addresses total dose testing which is basically gamma rays. Okay, and at both high and low dose rate, as we'll get into later. Intersil also addresses single event effects of a fairly broad range, and those are typically addressed by heavy ion testing.
Low dose rate testing, you have to contrast this really in order to understand this. You have to look historically at how total dose testing which is done with gamma rays, how that's been performed. Historically this has been performed at what we call high dose rate, and typically to put this in some numbers, that would run somewhere in the range of 50rad to 300rad/s.
Low dose rate, on the other hand, is a much, much slower dose rate. The generally accepted number, and the one we perform our work in, is 0.01rad/s. You see how far that's away from 300rad a second. And that can also be expressed as 10mrad/s if you'd like.
Now why are we goofing with that? And the answer is that the low dose rate is what happens in space. Dose rates in space are almost uniformly low to the order of 10mrad/s. Low dose rate radiation testing has been a, let's call it a hot topic in silicon advanced research since about 1992, okay? In 1992, some researchers out at Mich research came up with a very unusual finding which showed that certain parts that looked very good at high dose rate degrade with amazing rapidity, orders and orders of magnitude, worse at low dose rate. And so, that was not a fully intuitive result, and indeed it had to be repeated, and in the intervening 19 years there is a very large amount of work that's been done on low dose rate effects. And, as we've learned about how different parts react in low dose rate, we've, as an industry, we've swung over more towards a low dose rate testing emphasis rather than a high dose rate testing emphasis.