This IC targets dual voltage hot swap applications across the +2. 5V to +3. 3V (nominal) bias supply voltage range with a second lower voltage rail down to less than 1V where a circuit breaker response to an over current event is preferred. It features a charge pump for driving external N-Channel MOSFETs, accurate programmable circuit breaker current thresholds and delay output undervoltage monitoring and reporting and adjustable soft-start. The circuit breaker current level (ICB) for each rail is set by two external resistors, and for each rail a delay (tCB) is set by an external capacitor on the TCB pin. After tCB has expired, the IC then quickly pulls down the associated GATE(s) output turning off its external FET(s).
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分類 | タイトル | 日付 |
データシート | PDF 775 KB | |
EOL通知 | PDF 1.17 MB | |
製品変更通知 | PDF 326 KB | |
ホワイトペーパー | PDF 295 KB | |
製品変更通知 | PDF 106 KB | |
製品変更通知 | PDF 173 KB | |
その他資料 | PDF 2.20 MB | |
アプリケーションノート | PDF 509 KB | |
アプリケーションノート | PDF 397 KB | |
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iSim:PE Offline Simulation Tool iSim Personal Edition (iSim:PE) speeds the design cycle and reduces risk early in any project, identifying parts that can be used in current as well as next-generation designs.
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Simulator | ルネサス |
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