概要

The RJH65T04BDPM-A0 650V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for power switching applications. It is available in a TO-3PFP package type.

  • Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 30A, VGE = 15V, Ta = 25 °C)
  • Built-in fast recovery diode in one package
  • Trench gate and thin wafer technology
  • High-Speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V, IC = 30A, Rg = 10Ω, Ta=25 °C , inductive load)
  • Operation frequency (20kHz ≤ f ˂ 40kHz)

アプリケーション

  • Power switching
  • Power factor correction (PFC) circuits

ドキュメント

設計・開発

ECADモデル

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Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    Carrier Type
    Price (USD) | 1ku
    ご購入 / サンプル
    型名
    RJH65T04BDPM-A0#T2
    circleアクティブ
    memory
    view_in_ar
    		TO-3PFP
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