概要

説明

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

特長

  • Logic level operation (4 to 6 V Gate drive)
  • High endurance capability against to the short circuit
  • Built-in the over temperature shut-down circuit
  • Latch type shut-down operation (Need 0 voltage recovery)

製品比較

アプリケーション

ドキュメント

設計・開発

モデル